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FZT657 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # FZT657
Description  SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
PDF  2 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FZT657 Datasheet(HTML) 2 Page - Diodes Incorporated

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SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3– FEBRUARY 1995
FEATURES
* Low saturation voltage
COMPLEMENTARY TYPE - FZT757
PARTMARKING DETAIL - FZT657
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
5V
Peak Pulse Current
ICM
1A
Continuous Collector Current
IC
0.5
A
Power Dissipation at Tamb=25°C
Ptot
2W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
300
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
300
V
IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
5V
IE=100µA
Collector Cut-Off Current ICBO
0.1
µ
A
VCB=200V
Emitter Cut-Off Current
IEBO
0.1
µ
A
VEB=3V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.5
V
IC=100mA, IB=10mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.0
V
IC=100mA, IB=10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.0
V
IC=100mA, VCE=5V*
Static Forward Current
Transfer Ratio
hFE
40
50
IC=10mA, VCE=5V*
IC=100mA, VCE=5V*
Transition Frequency
fT
30
MHz
IC=10mA, VCE=20V
f=20MHz
Output Capacitance
Cobo
20
pF
VCB=20V, f=1MHz
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT657
FZT657
C
C
E
B
3 - 214
3 - 213
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I+ -
Collector Current (Amps)
Single Pulse Test at Tamb=25°C
0.01
0.1
10
1
I+ -
Collector Current (Amps)
VBE(sat) v IC
IC/IB=10
I+ -
Collector Current (Amps)
hFE v IC
0.01
10
0.1
1
VCE=5V
0.01
10
0.1
1
0.6
0.8
1.0
1.2
IC/IB=10
0.4
I+ -
Collector Current (Amps)
VBE(on) v IC
Switching Speeds
I+ -
Collector Current (Amps)
0.1
1
IB1=IB2=IC/10
0.01
ts
tf
td
tr
1.2
1.4
0
ts
µs
2
1
3
td
tr
tf
µs
0.6
0.4
0.2
0.8
1.0
40
60
80
100
20
0
0.01
10
0.1
1
0.6
0.8
1.0
1.2
0.4
VCE=5V
VCE=10V
0.4
0.6
0.8
1.0
0.2
0
1.4
1.6
1.2
1.8
0
11000
100ms
10ms
1
DC
0.001
VCE - Collector Emitter Voltage (V)
Safe Operating Area
1ms
300µs
10
100
0.01
0.1



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