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LB1965 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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LB1965 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 6 page ![]() LB1965M No. 6189-2/6 Allowable Operating Ranges at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Input current range ICC 6.0 to 50 mA Hall amplifier common mode input VICM 0 to VIN–1.5 V voltage range RMI input voltage range VRMI 0.3 to VIN V Rth input voltage range VICM 0 to VIN–1 V Electrical Characteristics at Ta = 25˚C, ICC = 10 mA Parameter Symbol Conditions Ratings Unit min typ max Output limiter voltage VoLM1 Io = 0.1A 30 32 34 V Vosat1 Io = 0.5A 0.95 1.2 V Output saturation voltage Vosat2 Io = 1.0A 1.15 1.5 V Vosat3 Io = 1.5A 1.4 2.0 V Input voltage VIN Icc = 7.0 mA 6.4 6.7 7.0 V Amplifier input offset voltage VOFF –7.0 0 7.0 mV Amplifier input bias current IBA –250 nA FG output saturation voltage VFG(sat) IFG = 5 mA 0.15 0.3 V C charge voltage IC1 C = GND 2.7 3.9 5.0 µA C discharge voltage IC2 C = VIN 0.35 0.50 0.65 µA Comp input threshold voltage VTH1 0.77 0.8VIN 0.83 V VTH2 0.42 0.45VIN 0.48 V Ct discharge voltage VCT 0.20 0.22VIN 0.24 V Rt input current Irt VRT = GND 1 3 µA VRt amplification VRt RT = OPEN 1.52 1.56 1.60 times RMI offset voltage VRMIoff –7 0 +7 mA Thermal protection operating voltage TSD Design target value* 150 180 210 ˚C Pin Assignment 200 0 400 600 800 1000 –30 0 30 60 85 90 120 Pd max – Ta Ambient temperature, Ta – °C Specified substrate (114.3 × 76.1 × 1.5 mm3) glass epoxy 416 1 2 3 4 5 6 7 14 12 10 11 13 9 8 (Top View) LB1965M * Design target values are not measured. |
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