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FZT749 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # FZT749
Description  SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
PDF  2 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FZT749 Datasheet(HTML) 2 Page - Diodes Incorporated

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SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 - NOVEMBER 1995
FEATURES
* 25 Volt VCEO
* 3 Amp continuous current
* Low saturation voltage
* Excellent hFE specified up to 6A (pulsed).
COMPLEMENTARY TYPE –
FZT649
PARTMARKING DETAIL –
FZT749
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-35
V
Collector-Emitter Voltage
VCEO
-25
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-8
A
Continuous Collector Current
IC
-3
A
Power Dissipation at Tamb=25°C
Ptot
2W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Breakdown Voltages
V(BR)CBO
-35
V
IC=-100µA
V(BR)CEO
-25
V
IC=-10mA*
V(BR)EBO
-5
V
IE=-100µA
Collector Cut-Off
Currents
ICBO
-0.1
-10
µ
A
µ
A
VCB=-30V
VCB=-30V,Tamb=100°C
IEBO
-0.1
µ
A
VEB=4V
Saturation Voltages
VCE(sat)
-0.12
-0.40
-0.3
-0.6
V
V
IC=-1A, IB=-100mA*
IC=-3A, IB=-300mA*
VBE(sat)
-0.9
-1.25
V
IC=-1A, IB=-100mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-0.8
-1.0
V
IC=-1A, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE
70
100
75
15
200
200
150
50
300
IC=-50mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-6A, VCE=-2V*
Transition Frequency
fT
100
160
MHz
IC=-100mA, VCE=-5V
f=100MHz
Output Capacitance
Cobo
55
100
pF
VCB=-10V f=1MHz
Switching Times
ton
40
ns
IC=-500mA, VCC=-10V
IB1=IB2=-50mA
toff
450
ns
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT749
FZT749
C
C
E
B
TYPICAL CHARACTERISTICS
VCE(sat) v IC
IC -
Collector Current (Amps)
IC -
Collector Current (Amps)
IC -
Collector Current (Amps)
hFE v IC
VBE(sat) v IC
IC -
Collector Current (Amps)
VBE(on) v IC
VCE -
Collector Voltage (Volts)
Safe Operating Area
110
100
0.01
0.1
1.0
Single Pulse Test at Tamb=25°C
40
80
120
160
200
Switching Speeds
IC -
Collector Current (Amps)
0.1
1
IB1=IB2=IC/10
0.01
ts
tf
td
tr
0.001
1
0.01
0.1
ts
ns
600
200
1000
1200
td
tr
tf
ns
80
40
120
160
0
140
100
60
20
VCE=2V
IC/IB=10
VCE=2V
VCE=-10V
0.6
1.0
1.2
0.8
0.4
0.6
1.0
1.2
0.8
0.4
0.2
0.6
1.0
0.8
0.4
0.001
1
0.01
0.1
10
IC/IB=100
0.001
1
0.01
0.1
10
0
1.2
1.6
1.8
1.4
IC/IB=100
IC/IB=10
0.001
1
0.01
0.1
10
10
10
D.C.
1s
100ms
10ms
1.0ms
100µs
3 - 232
3 - 233



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