ZHCS1000 datasheet(1/3 Pages) DIODES

Part #	ZHCS1000

Description	SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ?쒾uperBAT?

PDF	3 Pages

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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SOT23 SILICON HIGH CURRENT

SCHOTTKY BARRIER DIODE ”SuperBAT”

ISSUE 2 - OCTOBER 1997

7

FEATURES:

•

High current capability

•

Low V

F

APPLICATIONS:

•

Mobile telecomms, PCMIA & SCSI

•

DC-DC Conversion

PARTMARKING DETAILS : ZS1

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Continuous Reverse Voltage

VR

40

V

Forward Current

IF

1000

mA

Forward Voltage @ IF = 1000mA(typ)

VF

425

mV

Average Peak Forward Current;D.C.= 50%

IFAV

1750

mA

Non Repetitive Forward Current t

≤100µs

t

≤10ms

IFSM

12

5.2

A

Power Dissipation at Tamb=25° C

Ptot

500

mW

Storage Temperature Range

Tstg

-55 to + 150

° C

Junction Temperature

Tj

125

° C

ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Reverse Breakdown

Voltage

V(BR)R

40

60

V

IR=300µA

Forward Voltage

VF

240

265

305

355

390

425

495

420

270

290

340

400

450

500

600

—

mV

IF= 50mA*

IF= 100mA*

IF= 250mA*

IF= 500mA*

IF= 750mA*

IF= 1000mA*

IF= 1500mA*

IF= 1000mA,Ta= 100° C

*

Reverse Current

IR

50

100

µA

VR= 30V

Diode Capacitance

CD

25

pF

f= 1MHz,VR=25V

Reverse Recovery

Time

trr

12

ns

switched from

IF = 500mA to IR =

500mA

Measured at IR = 50mA

*Measured under pulsed conditions. Pulse width= 300

µs. Duty cycle ≤2%

ZHCS1000

1

3

C

1

A

3

2

SOT23

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