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ZMY20M Datasheet(PDF) 2 Page - Diodes Incorporated |
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ZMY20M Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 4 page ![]() ZMY20M SEMICO NDUC TORS ISSUE 2 - JANUARY 2004 2 PARAMETER SYMBOL LIMIT UNIT Supply voltage VB 12 V Total power dissipation PTOT 120 mW Operating temperature range Tamb -25 to +125 °C Storage temperature range Tstg -25 to +125 °C ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Bridge resistance Rbr 1.2 1.7 2.2 k Output voltage range VO/VB 12 18 24 mV/V Auxiliary field Hx - 2 - kA/m Disturbing field Hd - - 30 kA/m Open circuit sensitivity S 3.0 5.5 7.0 (mV/V)/ (kA/m) No disturbing field Hd allowed VB = const. Hysteresis of output voltage VOH/VB -- 50 V/V Hy 2kA/m Offset voltage Voff/VB -1.5 - +1.5 mV/V Operating frequency fmax 0 - 1 MHz Temperature coefficient of offset voltages TCVoff -3 - +3 ( V/V)/K Tamb = -25 to +125°C Temperature coefficient of bridge resistance TCRbr 0.25 0.3 0.35 %/K Tamb = -25 to +125°C Temperature coefficient of open circuit sensitivity VB=5V TCSV -0.25 -0.3 -0.35 %/K Tamb = -25 to +125°C Temperature coefficient of open circuit sensitivity IB= 3mA TCSI - 0.05 - %/K Tamb = -25 to +125°C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) |
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