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ZTX604 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # ZTX604
Description  NPN SILICON PLANAR MEDIUM POWER
PDF  3 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZTX604 Datasheet(HTML) 2 Page - Diodes Incorporated

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NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 1 – MARCH 94
FEATURES
* 120 Volt VCEO
* 1 Amp continuous current
* Gain of 2K at IC=1 Amp
*Ptot= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX604
ZTX605
UNIT
Collector-Base Voltage
VCBO
120
140
V
Collector-Emitter Voltage
VCEO
100
120
V
Emitter-Base Voltage
VEBO
10
V
Peak Pulse Current
ICM
4A
Continuous Collector Current
IC
1A
Power Dissipation at Tamb=25°C
derate above 25°C
Ptot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX604
ZTX605
UNIT
CONDITIONS.
MIN.
MAX. MIN.
MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO
120
140
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
100
120
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
10
10
V
IE=100µA
Collector Cut-Off
Current
ICBO
0.01
10
0.01
10
µ
A
µ
A
µ
A
µ
A
VCB=100V
VCB=120V
VCB=100V,Tamb=100°C
VCB=120V,Tamb=100°C
Emitter Cut-Off
Current
IEBO
0.1
0.1
µ
A
VEB=8V
Colllector-Emitter
Cut-Off Current
ICES
10
10
µ
A
VCES=100V
VCES=120V
Collector-Emitter
Saturation Voltage
VCE(sat)
1.0
1.5
1.0
1.5
V
V
IC=250mA, IB=0.25mA*
IC=1A, IB=1mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.8
1.8
V
IC=1A, IB=1mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.7
1.7
V
IC=1A, VCE=5V*
ZTX604
ZTX605
3-212
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX604
ZTX605
UNIT CONDITIONS.
MIN.
MAX. MIN.
MAX.
Static Forward
Current Transfer Ratio
hFE
2K
5K
2K
0.5K
100K
2K
5K
2K
0.5K
100K
IC=50mA, VCE=5V
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
Transition Frequency
fT
150
150
MHz
IC=100mA, VCE=10V
f=20MHz
Input Capacitance
Cibo
90 Typical
pF
VEB=500mV, f=1MHz
Output Capacitance
Cobo
15 Typical
pF
VCB=10V, f=1MHz
Switching Times
ton
0.5 Typical
µ
s
IC=500mA, VCE=10V
IB1=IB2=0.5mA
toff
1.6 Typical
µ
s
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
The maximum permissible operational temperature can be obtained from this graph using the
following equation
Tamb(max) =
Power(max) − Power(act)
0.0057
+25°C
Tamb(max)= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a given VCE
and source resistance (RS)
Power(actual)= Actual power dissipation in users circuit
C
B
E
E-Line
TO92 Compatible
ZTX604
ZTX605
Voltage Derating Graph
VCE - Collector-Emitter Voltage (Volts)
1.0
0.8
0.6
0.4
0
0.2
1
10
100
DC Conditions
R5 = 100KΩ
R5 = ∞
200
R5 = 1MΩ
R5 = 20KΩ
ZTX605
ZTX604
3-213



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