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LC374500ST Datasheet(PDF) 3 Page - Sanyo Semicon Device

Part # LC374500ST
Description  Internal Synchronization Silicon Gate 4M (524288-word x 8-bit) mask ROM Pin Compatible with Flash Memory
PDF  4 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LC374500ST Datasheet(HTML) 3 Page - Sanyo Semicon Device

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No. 5610-3/4
LC374500ST
Parameter
Symbol
Condition
Rating
Unit
Note
Supply voltage
VCC
–0.3 to +7.0
V
1
Input pin voltage
VIN
–0.3 to VCC + 0.3
V
1, 2
Output pin voltage
VOUT
–0.3 to VCC + 0.3
V
1
Allowable power dissipation
Pd max
Ta = 25°C, reference value for the Sanyo DIP.
1.0
W
1
Operating temperature
Topr
–10 to +70
°C
1
Storage temperature
Tstg
–55 to +125
°C
1
Specifications
Absolute Maximum Ratings
Note: 1. This device may be permanently damaged by stresses in excess of those listed in the maximum ratings. These are stress ratings only, and
functional operation of the device at these conditions or any other conditions beyond those listed in the “DC Allowable Operating Ranges” item is
not implied.
2. The minimum value is –3.0 V for pulse widths of under 30 ns.
Note:
3. These parameters are sampled, and are not measured for every unit.
Note: Values in parentheses are guaranteed at Ta = 25°C.
Note: Values in parentheses are for VCC = 4.5 to 5.5 V
*: tOD is defined as the time between the rise of either CE or OE, whichever comes first, and the point when the output goes to the high-impedance
state.
These parameters are sampled, and are not measured for every unit.
Parameter
Symbol
Conditions
Ratings
Unit
Note
min
typ
max
Input pin capacitance
CIN
VIN = 0 V, reference value for the Sanyo DIP.
8
pF
3
Output pin capacitance
COUT
VOUT = 0 V, reference value for the Sanyo DIP.
10
pF
3
Capacitance Characteristics at Ta = 25°C, f = 1.0 MHz
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Supply voltage
VCC
2.6
5.0
5.5
V
Input high-level voltage
VIH
2.2
VCC + 0.3
V
Input low-level voltage
VIL
–0.3
+0.6
V
DC Allowable Operating Ranges at Ta = –10 to +70°C, VCC = 2.6 to 5.5 V
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Operating current
ICCA1
CE = 0.2 V, VI = VCC – 0.2 V/0.2 V
30
µA
ICCA2
CE = VIL, IO = 0 mA, VL = VIH/VIL, f = 10 MHz
55
mA
Standby current
ICCS1
CE = VCC – 0.2 V
30 (1.0)
µA
ICCS2
CE = VIH
1.0 (300)
mA (µA)
Input leakage current
ILI
VIN = 0 to VCC
±1.0
µA
Output leakage current
ILO
CE or OE = VIH, VOUT = 0 to VCC
±1.0
µA
Output high-level voltage
VOH
IOH = –0.5 mA
0.8 VCC
V
Output low-level voltage
VOL
IOL = 0.5 mA
0.2
V
DC Electrical Characteristics at Ta = –10 to +70°C, VCC = 2.6 to 5.5 V
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Cycle time
tCYC
200
ns
Address access time
tAA
200 (120)
ns
CE access time
tCA
200 (100)
ns
OE access time
tOA
80 (40)
ns
Output hold time
tOH
20
ns
Output disable time*
tOD
100
ns
AC Characteristics at Ta = –10 to +70°C, VCC = 2.6 to 5.5 V



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