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LC378100QM Datasheet(PDF) 3 Page - Sanyo Semicon Device

Part # LC378100QM
Description  8 MEG (1048576 words x 8 bits) Mask ROM Internal Clocked Silicon Gate
PDF  4 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LC378100QM Datasheet(HTML) 3 Page - Sanyo Semicon Device

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No. 5611-3/4
LC378100QM, QT
Parameter
Symbol
Conditions
Ratings
Unit
Supply voltage
VCC
–0.3 to +7.0
V
Supply input voltage
VIN
–0.3*2 to VCC + 0.3
V
Supply output voltage
VOUT
–0.3 to VCC + 0.3
V
Allowable power dissipation
Pd max
Ta = 25°C; Reference values for the SANYO DIP package
1.0
W
Operating temperature
Topr
–10 to +70
°C
Storage temperature
Tstg
–55 to +125
°C
Specifications
Absolute Maximum Ratings *1
Note: 1. Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation should be restricted to Recommended
Operating Conditions.
2. VIN (min) = –3.0 V (pulse width ≤ 30 ns)
Note: 1. tOD is measured from the earlier edge of the CE or OE’s going high impedance.
This parameter is periodically sampled and not 100% tested.
2. Guaranteed at VCC = 4.5 to 5.5 V
Note: * This parameter is periodically sampled and not 100% tested.
Note: * Guaranteed at Ta = 25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Input capacitance
CIN
VIN = 0 V; Reference values for the SANYO DIP package
8
pF
Output capacitance
COUT
VOUT = 0 V; Reference values for the SANYO DIP package
10
pF
Input/Output Capacitance* at Ta = 25°C, f = 1.0 MHz
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Supply voltage
VCC
2.6
5.0
5.5
V
Input high level voltage
VIH
2.2
VCC + 0.3
V
Input low level voltage
VIL
–0.3
+0.6
V
DC Recommended Operating Ranges at Ta = –10 to +70°C, VCC = 2.6 to 5.5 V
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Operating supply current
ICCA1
CE = 0.2 V, VI = VCC – 0.2 V/0.2 V
30
mA
ICCA2
CE = VIL, IO = 0 mA, VI = VIH/VIL, f = 10 MHz
55
mA
Standby supply current
ICCS1
CE = VCC – 0.2 V
30 (1.0)
µA
ICCS2
CE = VIH
1.0 (300)
mA(µA)
Input leakage current
ILI
VIN = 0 to VCC
±1.0
µA
Output leakage current
ILO
CE or OE = VIH, VOUT = 0 to VCC
±1.0
µA
Output high level voltage
VOH
IOH = –0.5 mA
0.8 VCC
V
Output low level voltage
VOL
IOL = 0.5 mA
0.2
V
DC Electrical Characteristics at Ta = –10 to +70°C, VCC = 2.6 to 5.5 V
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Cycle time
tCYC
200 (120)
ns
Address access time
tAA
200 (120)
ns
CE access time
tCA
200 (100)
ns
OE access time
tOA
80 (40)
ns
Output hold time
tOH
20
ns
Output disable time*1
tOD*1
100
ns
AC Characteristics at Ta = –10 to +70°C, VCC = 2.6 to 5.5 V



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