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ZTX705 Datasheet(PDF) 2 Page - Diodes Incorporated |
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ZTX705 Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 3 page ![]() PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 3 MAY 94 FEATURES * 120 Volt VCEO * 1 Amp continuous current * Gain of 3K at IC=1 Amp *Ptot=1 Watt APPLICATIONS * Lamp, solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX704 ZTX705 UNIT Collector-Base Voltage VCBO -120 -140 V Collector-Emitter Voltage VCEO -100 -120 V Emitter-Base Voltage VEBO -10 V Peak Pulse Current ICM -4 A Continuous Collector Current IC -1 A Power Dissipation at Tamb = 25°C derate above 25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL ZTX704 ZTX705 UNIT CONDITIONS. MIN. MAX. MIN. MAX. Collector-Base Breakdown Voltage V(BR)CBO -120 -140 V IC=-100µA Collector-Emitter Breakdown Voltage VCEO(SUS) -100 -120 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -10 -10 V IE=-100µA Collector Cut-Off Current ICBO -0.1 -10 -0.1 -10 µ A µ A µ A µ A VCB=-100V VCB=-120V VCB=-100V, Tamb=100°C VCB=-120V, Tamb=100°C Collector Cut-Off Current ICES -10 -10 µ A VCES=-80V Emitter Cut-Off Current IEBO -0.1 -0.1 µ A VEB=-8V Collector-Emitter Saturation Voltage VCE(sat) -1.3 -2.5 -1.3 -2.5 V V IC=-1A, IB=-1mA* IC=-2A, IB=-2mA* Base-Emitter Saturation Voltage VBE(sat) -1.8 -1.8 V IC=-1A, IB=-10mA* Base-Emitter Turn-On Voltage VBE(on) -1.7 -1.7 V IC=-1A, VCE=-5V* ZTX704 ZTX705 3-250 C B E E-Line TO92 Compatible ELECTRICAL CHARACTERISTICS (at Tamb= 25°C). PARAMETER SYMBOL ZTX704 ZTX705 UNIT CONDITIONS. MIN. MAX. MIN. MAX. Static Forward Current Transfer Ratio hFE 3K 3K 3K 2K 30K 3K 3K 3K 2K 30K IC=-10mA, VCE=-5V* IC=-100mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* Transition Frequency fT 160 Typical 160 Typical MHz IC=-100mA, VCE=-10V f=20MHz Input Capacitance Cibo 90 Typical 90 Typical pF VEB=-0.5V, f=1MHz Output Capacitance Cobo 15 Typical 15 Typical pF VCE=-10V, f=1MHz Switching Times ton 0.6 Typical 0.6 Typical µ s IC=-0.5A, VCE=-10V IB1=IB2=-0.5mA toff 0.8 Typical 0.8 Typical µ s *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% The maximum permissible operational temperature can be obtained from this graph using the following equation Tamb(max) = Power(max) − Power(act) 0.0057 +25°C Tamb(max)= Maximum operating ambient temperature Power(max) = Maximum power dissipation figure, obtained from the above graph for a given VCE and source resistance (RS) Power(actual)= Actual power dissipation in users circuit ZTX704 ZTX705 Voltage Derating Graph VCE - Collector-Emitter Voltage (Volts) 1.0 0.8 0.6 0.4 0 0.2 R5 = 22KΩ 110 100 DC Conditions R5 = 100KΩ R5 = 1MΩ R5 = ∞ 3-251 |
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