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ZTX705 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # ZTX705
Description  PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
PDF  3 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZTX705 Datasheet(HTML) 2 Page - Diodes Incorporated

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PNP SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 3 – MAY 94
FEATURES
* 120 Volt VCEO
* 1 Amp continuous current
* Gain of 3K at IC=1 Amp
*Ptot=1 Watt
APPLICATIONS
* Lamp, solenoid and relay drivers
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX704
ZTX705
UNIT
Collector-Base Voltage
VCBO
-120
-140
V
Collector-Emitter Voltage
VCEO
-100
-120
V
Emitter-Base Voltage
VEBO
-10
V
Peak Pulse Current
ICM
-4
A
Continuous Collector Current
IC
-1
A
Power Dissipation at Tamb = 25°C
derate above 25°C
Ptot
1
5.7
W
mW/ °C
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX704
ZTX705
UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO
-120
-140
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
VCEO(SUS) -100
-120
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-10
-10
V
IE=-100µA
Collector Cut-Off
Current
ICBO
-0.1
-10
-0.1
-10
µ
A
µ
A
µ
A
µ
A
VCB=-100V
VCB=-120V
VCB=-100V, Tamb=100°C
VCB=-120V, Tamb=100°C
Collector Cut-Off
Current
ICES
-10
-10
µ
A
VCES=-80V
Emitter Cut-Off
Current
IEBO
-0.1
-0.1
µ
A
VEB=-8V
Collector-Emitter
Saturation Voltage
VCE(sat)
-1.3
-2.5
-1.3
-2.5
V
V
IC=-1A, IB=-1mA*
IC=-2A, IB=-2mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-1.8
-1.8
V
IC=-1A, IB=-10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-1.7
-1.7
V
IC=-1A, VCE=-5V*
ZTX704
ZTX705
3-250
C
B
E
E-Line
TO92 Compatible
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).
PARAMETER
SYMBOL
ZTX704
ZTX705
UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Static Forward
Current Transfer
Ratio
hFE
3K
3K
3K
2K
30K
3K
3K
3K
2K
30K
IC=-10mA, VCE=-5V*
IC=-100mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-2A, VCE=-5V*
Transition
Frequency
fT
160 Typical
160 Typical MHz
IC=-100mA, VCE=-10V
f=20MHz
Input Capacitance
Cibo
90 Typical
90 Typical
pF
VEB=-0.5V, f=1MHz
Output Capacitance Cobo
15 Typical
15 Typical
pF
VCE=-10V, f=1MHz
Switching Times
ton
0.6 Typical
0.6 Typical
µ
s
IC=-0.5A, VCE=-10V
IB1=IB2=-0.5mA
toff
0.8 Typical
0.8 Typical
µ
s
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
The maximum permissible operational temperature can be obtained from this graph using
the following equation
Tamb(max) =
Power(max) − Power(act)
0.0057
+25°C
Tamb(max)= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a
given VCE and source resistance (RS)
Power(actual)= Actual power dissipation in users circuit
ZTX704
ZTX705
Voltage Derating Graph
VCE - Collector-Emitter Voltage (Volts)
1.0
0.8
0.6
0.4
0
0.2
R5 = 22KΩ
110
100
DC Conditions
R5 = 100KΩ
R5 = 1MΩ
R5 = ∞
3-251



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