PNP SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE

3 – JULY 2005

FEATURES

*

60 Volt V

CEO

*

2 Amp continuous current

*

Low saturation voltage

*P

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

ZTX750

ZTX751

UNIT

Collector-Base Voltage

V

CBO

-60

-80

V

Collector-Emitter Voltage

V

CEO

-45

-60

V

Emitter-Base Voltage

V

EBO

-5

V

Peak Pulse Current

I

CM

-6

A

Continuous Collector Current

I

C

-2

A

Power Dissipation: at T

derate above 25°C

P

tot

1

5.7

W

mW/°C

Operating and Storage Temperature Range

T

-55 to +200

°C

PARAMETER

SYMBOL

ZTX750

ZTX751

UNIT CONDITIONS.

MIN.

TYP.

MAX. MIN.

TYP.

MAX.

Collector-Base

Breakdown

Voltage

V

(BR)CBO

-60

-80

V

I

Collector-Emitter

Breakdown

Voltage

V

(BR)CEO

-45

-60

V

I

Emitter-Base

Breakdown

Voltage

V

(BR)EBO

-5

-5

V

I

Collector Cut-Off

Current

I

CBO

-0.1

-10

-0.1

-10

µA

µA

µA

µA

V

V

V

V

Emitter Cut-Off

Current

I

EBO

-0.1

-0.1

µA

V

Collector-Emitter

Saturation Voltage

V

CE(sat)

-0.15

-0.28

-0.3

-0.5

-0.15

-0.28

-0.3

-0.5

V

V

I

I

Base-Emitter

Saturation Voltage

V

BE(sat)

-0.9

-1.25

-0.9

-1.25

V

I

Base-Emitter

Turn-On Voltage

V

BE(on)

-0.8

-1

-0.8

-1

V

IC=-1A, V

Static Forward

Current Transfer

Ratio

h

FE

70

100

80

40

200

200

170

80

300

70

100

80

40

200

200

170

80

300

I

I

I

I

Switching Times

t

on

45

45

I

I

t

off

800

800

Output Capacitance

C

obo

30

30

pF

V

ZTX750

ZTX751

3-257

C

B

E

E-Line

TO92 Compatible

PARAMETER

SYMBOL

ZTX750

ZTX751

UNIT CONDITIONS.

MIN.

TYP.

MAX

.

MIN.

TYP.

MAX

.

Transition

Frequency

f

T

100

140

100

140

MHz

I

f=100MHz

Switching Times

t

on

40

40

ns

I

V

I

t

off

450

450

ns

Output

Capacitance

C

obo

30

30

pF

V

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ® 2%

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

MAX.

UNIT

Thermal Resistance:Junction to Ambient

1

Junction to Ambient

2

Junction to Case

R

th(j-amb)1

R

R

th(j-case)

175

116

70

°C/W

°C/W

°C/W

† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

ZTX750

ZTX751

-40

0.0001

Derating curve

T -Temperature (°C)

Maximum transient thermal impedance

Pulse Width (seconds)

10

100

1

0.1

0.01

-20

0

20 40

60 80 100 120

200

180

160

140

0.001

0

100

200

D=0.2

D=0.1

Single Pulse

D=0.5

1.0

0.5

2.0

1.5

Case

temperature

2.5

Ambient

temperat

ure

0

D=1 (D.C.)

3-258