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ZTX758 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # ZTX758
Description  PNP SILICON PLANAR MEDIUM POWER
PDF  3 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZTX758 Datasheet(HTML) 2 Page - Diodes Incorporated

  ZTX758 Datasheet HTML 1Page - Diodes Incorporated ZTX758 Datasheet HTML 2Page - Diodes Incorporated ZTX758 Datasheet HTML 3Page - Diodes Incorporated  
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PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 – APRIL 94
FEATURES
* 400 Volt VCEO
* 0.5 Amp continuous current
*Ptot=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-1
A
Continuous Collector Current
IC
-500
mA
Power Dissipation at Tamb=25°C
derate above 25°C
Ptot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-400
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
VCEO(SUS) -400
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
V
IE=-100µA
Collector Cut-Off
Current
ICBO
-100
nA
VCB=-320V
Collector Cut-Off
Current
ICES
-100
nA
VCE=-320V
Emitter Cut-Off Current IEBO
-100
nA
VEB=-4V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.30
-0.25
-0.50
V
V
V
IC=-20mA, IB=-1mA
IC=-50mA, IB=-5mA*
IC=-100mA, IB=-10mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-0.9
V
IC=-100mA, IB=-10mA*
Base-Emitter
Turn On Voltage
VBE(on)
-0.9
V
IC=-100mA, VCE=-5V*
Static Forward Current
Transfer Ratio
hFE
50
50
40
IC=-1mA, VCE=-5V
IC=-100mA, VCE=-5V*
IC=-200mA, VCE=-10V*
E-Line
TO92 Compatible
3-267
ZTX758
ZTX758
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C)
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Transition
Frequency
fT
50
MHz
IC=-20mA, VCE=-20V
f=20MHz
Output Capacitance
Cobo
20
pF
VCB=-20V, f=1MHz
Switching times
ton
toff
140
2000
ns
ns
IC=-100mA, VC=-100V
IB1=10mA, IB2=-20mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance:Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2†
Rth(j-case)
175
116
70
°C/W
°C/W
°C/W
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
C
B
E
-40
0.0001
Derating curve
T -Temperature (°C)
Maximum transient thermal impedance
Pulse Width (seconds)
10
100
1
0.1
0.01
-20
0
20 40
60 80 100 120
200
180
160
140
0.001
0
100
200
D=0.2
D=0.1
Single Pulse
D=0.5
t1
tP
D=t1/tP
1.0
0.5
2.0
1.5
Case
temperature
2.5
Ambient
temperat
ure
0
D=1 (D.C.)
3-268



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