ZXMC3AMC

Document number: DS35088 Rev. 1 - 2

4 of 11

www.diodes.com

December 2010

© Diodes Incorporated

ZXMC3AMC

A Product Line of

Diodes Incorporated

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

-

-

V

Zero Gate Voltage Drain Current

-

-

0.5

μA

Gate-Source Leakage

-

-

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1.0

-

3.0

V

Static Drain-Source On-Resistance (Note 10)

-

0.100

0.120

Ω

0.140

0.180

Forward Transconductance (Note 10 & 11)

-

3.5

-

S

Diode Forward Voltage (Note 10)

-

0.85

0.95

V

Reverse Recover Time (Note 11)

-

17.7

-

ns

Reverse Recover Charge (Note 11)

-

13.0

-

nC

DYNAMIC CHARACTERISTICS (Note 11)

Input Capacitance

-

190

-

pF

f = 1.0MHz

Output Capacitance

-

38

-

pF

Reverse Transfer Capacitance

-

20

-

pF

Total Gate Charge (Note 12)

-

2.3

-

nC

Total Gate Charge (Note 12)

-

3.9

-

nC

Gate-Source Charge (Note 12)

-

0.6

-

nC

Gate-Drain Charge (Note 12)

-

0.9

-

nC

Turn-On Delay Time (Note 12)

-

1.7

-

ns

Turn-On Rise Time (Note 12)

-

2.3

-

ns

Turn-Off Delay Time (Note 12)

-

6.6

-

ns

Turn-Off Fall Time (Note 12)

-

2.9

-

ns

Notes:

10. Measured under pulsed conditions. Width

≤ 300µs. Duty cycle ≤ 2%.

11. For design aid only, not subject to production testing.

12. Switching characteristics are independent of operating junction temperature.