CEM2187 datasheet(3/4 Pages) CET

Part #	CEM2187

Description	P-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	CET [Chino-Excel Technology]

Direct Link	http://www.cetsemi.com

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3 / 4 page

CEM2187

-VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

-VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

-VDS, Drain-to-Source Voltage (V)

Figure 3. Capacitance

2.2

1.9

1.6

1.3

1.0

0.7

0.4

VGS=-4.5V

ID=-7.6A

-100

-50

100

150

200

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

VDS=VGS

ID=-250µA

-50 -25 0 25 50 75 100 125 150

-VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

0.0

0.5

1.5

2.5

TJ=125 C

-55 C

25 C

TJ, Junction Temperature( C)

Figure 4. On-Resistance Variation

with Temperature

0.4

0.6

0.8

1.0

-1

1.4

1.2

VGS=0V

Ciss

Coss

Crss

3600

3000

2400

1800

1200

600

0.0

0.25

1.00

1.5

-VGS=1V

1.25

0.75

0.5

-VGS=1.5,4,4.5V

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