CEP830G datasheet(1/4 Pages) CET

Part #	CEP830G

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	CET [Chino-Excel Technology]

Direct Link	http://www.cetsemi.com

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1 / 4 page

TO-220/263

CEP830G/CEB830G

CEF830G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed a

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

VDS

VGS

ID

PD

IDM f

500

0.66

83

20

5

±30

V

W

A

V

W/ C

1

S

G

D

G

S

D

CEB SERIES

TO-263(DD-PAK)

S

D

G

CEP SERIES

TO-220

CEF SERIES

TO-220F

S

D

G

Type

VDSS

RDS(ON)

ID

@VGS

CEP830G

CEF830G

500V

1.5Ω

5A

5A e

10V

0.33

42

20 e

5e

CEB830G

500V

1.5Ω

5A

10V

Lead free product is acquired.

http://www.cetsemi.com

PRELIMINARY

TO-220F

This is preliminary information on a new product in development now .

Details are subject to change without notice .

Rev 1. 2009.Nov.

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Parameter

Symbol

Limit

Units

C/W

62.5

1.5

RθJC

RθJA

3.6

65

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