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ZXTC6719MC Datasheet(PDF) 4 Page - Diodes Incorporated |
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ZXTC6719MC Datasheet(HTML) 4 Page - Diodes Incorporated |
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4 / 9 page  ZXTC6719MC Document number: DS31928 Rev. 2 - 2 4 of 9 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC6719MC Electrical Characteristics, NPN Transistor (at TA = 25°C unless otherwise specified) Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 100 190 - V IC = 100µA Collector-Emitter Breakdown Voltage (Note 3) V(BR)CEO 50 65 - V IC = 10mA Emitter-Base Breakdown Voltage V(BR)EBO 7.5 8.2 - V IE = 100µA Collector Cutoff Current ICBO - - 25 nA VCB = 80V Emitter Cutoff Current IEBO - - 25 nA VEB = 6V Collector Emitter Cutoff Current ICES - - 25 nA VCES = 40V Static Forward Current Transfer Ratio (Note 3) hFE 200 300 200 100 - 400 450 400 225 40 - - - - - - IC = 10mA, VCE = 2V IC = 200mA, VCE = 2V IC = 1A, VCE = 2V IC = 2A, VCE = 2V IC = 6A, VCE = 2V Collector-Emitter Saturation Voltage (Note 3) VCE(sat) - - - - - - 10 70 145 115 225 270 20 100 200 220 300 320 mV IC = 0.1A, IB = 10mA IC = 1A, IB = 5mA IC = 1A, IB = 10mA IC = 2A, IB = 50mA IC = 3A, IB = 100mA IC = 4A, IB = 200mA Base-Emitter Turn-On Voltage (Note 3) VBE(on) - 0.94 1.00 V IC = 4A, VCE = 2V Base-Emitter Saturation Voltage (Note 3) VBE(sat) - 1.00 1.05 V IC = 4A, IB = 200mA Output Capacitance Cobo - 12 20 pF VCB = 10V. f = 1MHz Transition Frequency fT 100 165 - MHz VCE = 10V, IC = 50mA, f = 100MHz Turn-on Time ton - 170 - ns VCC = 10V, IC = 1A IB1 = IB2 = 10mA Turn-off Time toff - 750 - ns Notes: 3. Measured under pulsed conditions. |
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