ZXTN649F datasheet(2/7 Pages) DIODES

2 / 7 page

ZXTN649F

Document Number DS31900 Rev. 2 - 2

2 of 7

www.diodes.com

October 2009

A Product Line of

Diodes Incorporated

ZXTN649F

NP N LO W V CE(sat) TRANSISTOR IN SO T-23

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Continuous Collector Current (Note 3)

Peak Pulse Current

ICM

Base Current

500

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation at TA = 25°C (Note 4)

725

Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C

RθJA

172

°C/W

Thermal Resistance, Junction to Lead @ TA = 25°C

RθJL

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Notes:

3. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions

4. For device mounted on FR4 PCB measured at t

≤ 2 Secs.

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