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ZXTN2018F Datasheet(PDF) 4 Page - Diodes Incorporated

Part # ZXTN2018F
Description  60V, SOT23, NPN medium power transistor
PDF  6 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXTN2018F Datasheet(HTML) 4 Page - Diodes Incorporated

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ZXTN2018F
Issue 2 - September 2005
4
www.zetex.com
© Zetex Semiconductors plc 2005
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
V(BR)CBO
140
180
V
IC=100 A
Collector-emitter breakdown
voltage
V(BR)CEV
140
180
V
IC =1 A,
-1V < VBE < +0.3V
Collector-emitter breakdown
voltage
V(BR)CEO
60
80
V
IC=10mA
(a)
NOTES:
(a) Measured under pulsed conditions. Pulse width=300 S. Duty cycle
2%.
Emitter-base breakdown
voltage
V(BR)EBO
78
V
IE=100 A
Collector-emitter cut-off
current
ICEV
<1
20
nA
VCE=110V,
VBE = -1V
Collector-base cut-off current
ICBO
<1
20
nA
VCB=110V
Emitter-base cut-off current
IEBO
<1
10
nA
VEB=6V
Static forward current transfer
ratio
HFE
100
100
40
15
220
200
65
25
300
IC=10mA, VCE=1V
(a)
IC=2A, VCE=1V
(a)
IC=5A, VCE=1V
(a)
IC=10A, VCE=1V
(a)
Collector-emitter saturation
voltage
VCE(sat)
15
35
40
85
145
170
30
45
55
110
170
210
mV
mV
mV
mV
mV
mV
IC=0.1A, IB=5mA
(a)
IC=1A, IB=100mA
(a)
IC=1A, IB=50mA
(a)
IC=2A, IB=50mA
(a)
IC=5A, IB=250mA
(a)
IC=6A, IB=300mA
(a)
Base-emitter saturation voltage
VBE(sat)
0.92
1.00
V
IC=5A, IB=250mA
(a)
Base-emitter turn-on voltage
VBE(on)
0.85
0.95
V
IC=5A, VCE=1V
(a)
Transition frequency
fT
130
MHz
Ic=100mA, VCE=10V,
f=50MHz
Output capacitance
Cobo
28
pF
VCB=10V, f=1MHz
Turn-on time
t(on)
33
ns
VCC=10V, IC=1A,
Turn-off time
t(off)
668
ns
IB1=IB2=100mA



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