ZXTP2008Z datasheet(4/6 Pages) DIODES

4 / 6 page

ZXTP2008Z

ISSUE 1 - JUNE 2005

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS

Collector-base breakdown voltage

BVCBO

-50

-70

IC = -100 A

Collector-emitter breakdown voltage BVCER

-50

-70

IC =-1 A, RB <1k

Collector-emitter breakdown voltage BVCEO

-30

-40

IC = -10mA *

Emitter-base breakdown voltage

BVEBO

-7.0

-8.0

IE = -100 A

Collector cut-off current

ICBO

<-1

-20

-0.5

VCB = -40V

VCB = -40V,Tamb =100°C

Collector cut-off current

ICER

R<1k

<-1

-20

-0.5

VCB = -40V

VCB = -40V,Tamb =100°C

Emitter cut-off current

IEBO

<-1

-10

VEB = -6V

Collector-emitter saturation voltage

VCE(SAT)

-25

-35

-55

-130

-40

-55

-80

-175

IC = -0.5A, IB = -20mA *

IC = -1A, IB = -100mA *

IC = -1A, IB = -20mA *

IC = -2A, IB = -200mA *

IC = -5.5A, IB =-500mA *

Base-emitter saturation voltage

VBE(SAT)

-970

-1070

IC = -5.5A, IB = -500mA *

Base-emitter turn-on voltage

VBE(ON)

-860

-960

IC = -5.5A, VCE = -1V *

Static forward current transfer ratio

hFE

100

225

200

145

300

IC = -10mA, VCE = -1V *

IC = -1A, VCE = -1V *

IC = -5A, VCE = -1V *

IC = -20A, VCE = -1V *

Transition frequency

110

MHz

IC = -100mA, VCE = -10V

f = 50MHz

Output capacitance

COBO

VCB = -10V, f = 1MHz *

Switching times

tON

tOFF

230

IC = -1A, VCC = -10V,

IB1 =-IB2 = -100mA

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

NOTES

* Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

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