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ZXTP2009Z Datasheet(PDF) 2 Page - Diodes Incorporated

Part # ZXTP2009Z
Description  40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR
PDF  6 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXTP2009Z Datasheet(HTML) 2 Page - Diodes Incorporated

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ZXTP2009Z
SEMICO NDUC TORS
ISSUE 1 - JUNE 2005
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient
(a)
R JA
139
°C/W
Junction to ambient
(b)
R JA
83
°C/W
Junction to ambient
(c)
R JA
60
°C/W
Junction to ambient
(d)
R JA
42
°C/W
NOTES
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB measured at t
5 secs.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BVCBO
-50
V
Collector-base voltage
BVCBS
-50
V
Collector-emitter voltage
BVCEO
-40
V
Emitter-base voltage
BVEBO
-7.5
V
Continuous collector current
(b)
IC
-5.5
A
Peak pulse current
ICM
-15
A
Power dissipation at TA =25°C
(a)
Linear derating factor
PD
0.9
7.2
W
mW/°C
Power dissipation at TA =25°C
(b)
Linear derating factor
PD
1.5
12
W
mW/°C
Power dissipation at TA =25°C
(c)
Linear derating factor
PD
2.1
16.8
W
mW/°C
Power dissipation at TA =25°C
(d)
Linear derating factor
PD
3
24
W
mW/°C
Operating and storage temperature range
Tj,Tstg
-55 to 150
°C
ABSOLUTE MAXIMUM RATINGS



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