2SA2018 datasheet(1/3 Pages) WEITRON

Part #	2SA2018

Description	PNP Genera Purpose Transistors

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	WEITRON [Weitron Technology]

Direct Link	http://www.weitron.com.tw

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1 / 3 page

FEATURES:

* A collector current is large.

* Low VCE(sat). VCE(sat)

≤-250mV @ I

C = -200mA / IB = -10mA

MARKING

Item

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=-10

μA, IE=0

-15

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-1mA, IB=0

-12

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-10

μA, IC=0

-6

V

Collector cut-off current

ICBO

VCB= -15 V, IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=- 6V, IC=0

-0.1

μA

DC current gain

hFE

VCE=-2V, IC=-10mA

270

680

Collector-emitter saturation voltage

VCE(sat)

IC=-200mA,IB=-10mA

-0.25

V

Transition frequency

fT

VCE=-2V,IC=-10mA, f=100MHz

260

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

6.5

pF

Symbol

VCBO

Collector- Base Voltage

-15

-12

-6

-0.5

0.15

150

-55 to +150

V

A

W

°C

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current -Continuous

PC

Collector Power Dissipation

TJ

Junction Temperature

Tstg

Storage Temperature

Lead(Pb)-Free

P b

http://www.weitron.com.tw

WEITRON

2SA2018

PNP Genera Purpose Transistors

1/3

24-Jul-07

Units

Value

Parameter

BW

2SA2018

SOT-523(SC-75)

1

2

3

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