WEITRON

hpp://www.weitron.com.tw

1/3

15-Feb-2011

NPN Plastic-Encapsulate Transistor

TO-92

2SC1008

WEITRON

Lead(Pb)-Free

P b

1. EMITTER

2. COLLECTOR

3. BASE

Symbol

Parameter

Value

Units

Collector-Base Voltage

ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

Units

MAX

TYP

Collector Current

Power Dissipation

Junction Temperature

Storage Temperature

Tstg

80

0.7

0.8

-55 to +150

-55 to +150

V

A

W

°C

°C

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition Frequency

DC current gain

80

60

8

0.1

0.1

400

0.4

1.1

30

40

V

V

V

µA

µA

V

V

MHz

G

Y

O

R

Rank

Range

40-80

200-400

120-240

70-140