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ZXTP23015CFH Datasheet(PDF) 4 Page - Diodes Incorporated

Part # ZXTP23015CFH
Description  15V, SOT23, PNP medium power transistor
PDF  8 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXTP23015CFH Datasheet(HTML) 4 Page - Diodes Incorporated

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ZXTP23015CFH
Issue 2 - May 2007
4
www.zetex.com
© Zetex Semiconductors plc 2007
ELECTRICAL CHARACTERISTICS (at TAMB = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit Conditions
Collector-base breakdown voltage V(BR)CBO
-15
-40
V
IC=-100 A
Collector-emitter breakdown
voltage
V(BR)CES
-15
-40
V
IC =-100 A
Collector-emitter breakdown
voltage
V(BR)CEO
-15
-25
V
IC=-10mA
(*)
Emitter-base breakdown voltage
V(BR)EBO
-7.0
-8.2
V
IE=-100 A
Emitter-collector breakdown
voltage
V(BR)ECO
-6.0
-8.5
V
IE=-100 A
Collector-emitter cut-off current
ICES
-20
nA
VCE=-12V
Collector-base cut-off current
ICBO
-20
nA
VCB=-12V
Emitter-base cut-off current
IEBO
-10
nA
VEB=-6V
Static forward current transfer
ratio
HFE
200
380
IC=-10mA, VCE=-2V
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300 S. Duty cycle
2%.
200
350
560
IC=-500mA, VCE=-2V
140
220
Ic=-6A, VCE=-2V
Collector-emitter saturation
voltage
VCE(sat)
-6
-10
mV
IC=-100mA, IB=-10mA
(*)
-27
-36
mV
IC=-1A, IB=-100mA
(*)
-90
-120
mV
IC=-3A, IB=-60mA
(*)
-140
-190
mV
IC=-6A, IB=-240mA
(*)
Base-emitter saturation voltage
VBE(sat)
-0.83 -0.93
V
IC=-3A, IB=-60mA
(*)
-0.93 -1.03
V
IC=-6A, IB=-240mA
(*)
Base-emitter turn-on voltage
VBE(on)
-0.83 -0.93
V
IC=-6A, VCE=-2V
(*)
Transition frequency
fT
270
MHz Ic=-500mA, VCE=-2V,
f=50MHz
Output capacitance
Cobo
78.4
pF
VCB=-10V, f=1MHz
Delay time
t (d)
16
ns
VCC=-5V, IC=-3A,
IB1=IB2=-150mA
Rise time
t (r)
13
ns
Storage time
t (stg)
123
ns
Fall time
t (f)
9ns



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