2SC3356 datasheet(1/3 Pages) WEITRON

Part #	2SC3356

Description	High-Frequency Amplifier Transistor NPN Silicon

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Manufacturer	WEITRON [Weitron Technology]

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2SC3356

WEITRON

http://www.weitron.com.tw

High-Frequency Amplifier Transistor

3. COLLECTOR

2. EMITTER

1. BASE

NPN Silicon

Lead(Pb)-Free

P b

SOT-23

1

2

3

1/3

Rev.B 25-Feb-09

FEATURES

* Low noise amplifier at VHF, UHF and CATV band.

* Low Noise and High Gain

* High Power Gain

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=10

μA, I

E=0

20

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 1mA, IB=0

12

V

Collector-emitter breakdown voltage

V (sat)

CE

IC= 50mA, IB=5mA

200

mV

Collector cut-off current

ICBO

VCB=10V, IE=0

1

μA

Emitter cut-off current

IEBO

VEB=1V, IC

1

0

=

μA

DC current gain

hFE

*

VCE=

3V, IC= 10mA

82

270

Transition frequency

fT

VCE=10V, IC= 20mA

7

GHz

Noise figure

NF

VCE=10V, IC= 7mA, f = 1GHz

2

dB

*pulse test: pulse width

≤350μs, Duty cycle≤2%

Symbol

Parameter

Value

Units

VCBO

Collector- Base Voltage

20

V

VCEO

Collector-Emitter Voltage

12

V

VEBO

Emitter-Base Voltage

3

V

IC

Collector Current -Continuous

0.1

A

PC

Collector Power Dissipation

0.25

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

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