2SC3838 datasheet(1/3 Pages) WEITRON

Part #	2SC3838

Description	High-Frequency Amplifier Transistor NPN Silicon

PDF	3 Pages

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Manufacturer	WEITRON [Weitron Technology]

Direct Link	http://www.weitron.com.tw

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MAXIMUM RATINGS

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current-Continuous

Symbol

VCEO

VCBO

VEBO

IC

Value

Unit

V

mA

Rating

Characteristics

Symbol

Min

Max

Unit

ELECTRICAL CHARACTERISTICS

Collector-Emitter Breakdown Voltage(I =1mA, I =0)

C

B

Collector-Base Breakdown Voltage(I =10

µA, I =0)

C

E

Emitter-Base Breakdown Voltage(I =10

µA, I =0)

E

C

Collector Cufo Current(V

=10V, I =0)

CB

E

Emitter Cufo Current(V

=2V, I =0)

EB

C

V(BR)CEO

V(BR)CBO

V(BR)EBO

ICBO

IEBO

3.0

-

0.5

V

µA

2SC3838

WEITRON

http://www.weitron.com.tw

High-Frequency Amplifier Transistor

(Ta=25ºC)

11

20

3.0

THERMAL CHARACTERISTICS

Total Device Dissipation FR-5 Board

T =25°C

Thermal Resistance, Junction Ambient

Symbol

Value

Unit

mW

Characteristics

T

150

625

°C

Device Marking

2SC3838=AD

11

20

0.5

(1)

A

PD

°C/W

R θJA

J, Tstg

Junction and Storage, Temperature

-55 to +150

1. FR-5=1.0 0.75 0.062 in

I

2

1

3

COLLECTOR

EMITTER

BASE

NPN Silicon

50

Lead(Pb)-Free

P b

SOT-23

1

2

3

1/3

Rev.A 23-Jan-09

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