2SC4116 datasheet(1/3 Pages) WEITRON

Part #	2SC4116

Description	General Purpose Transistor NPN Silicon

PDF	3 Pages

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Manufacturer	WEITRON [Weitron Technology]

Direct Link	http://www.weitron.com.tw

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1 / 3 page

FEATURES

* High voltage and high current

* Excellent hFE linearity

* High hFE

* Low noise

* Complementary to 2SA1586

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

VCBO

Collector-Base Voltage

60

VCEO

Collector-Emitter Voltage

50

150

100

-

150

-55 to +150

VEBO

Emitter-Base Voltage

5

IC

Collector Current -Continuous

PC

Collector Power Dissipation

TJ

Junction Temperature

℃

Tstg

Junction and Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

T

I

N

U

X

A

M

P

Y

T

N

I

M

s

n

o

i

t

i

d

n

o

c

t

s

e

T

l

o

b

m

y

S

r

e

t

e

m

a

r

a

P

Collector-base breakdown voltage

V(BR)CBO

IC=100

μA,IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

50

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100

μA,IC=0

5

V

Collector cut-off current

ICBO

VCB=60V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

DC current gain

hFE

VCE=6V,IC=2mA

70

700

Collector-emitter saturation voltage

VCE(sat)

IC=100mA,IB=10mA

0.25

V

Transition frequency

fT

VCE=10V,IC=1mA,

80

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

3.5

pF

Noise figure

NF

VCE=6V,Ic=0.1mA,

f=1KHZ,Rg=10K

Ω

10

dB

CLASSIFICATION OF hFE

Rank

L

B

R

G

Y

O

Range

70-140

120-240

200-400

350-700

Marking

LO

LY

LG

LL

1

2

3

2SC4116

SOT-323(SC-70)

1

BASE

COLLECTOR

EMITTER

3

2

General Purpose Transistor

NPN Silicon

Lead(Pb)-Free

P b

http://www.weitron.com.tw

WEITRON

1/3

25-Jun-08

Parameter

Value

Units

V

mA

mW

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