http://www.weitron.com.tw

WEITRON

Lead(Pb)-Free

P b

1/2

23-Nov-06

NPN Plastic-Encapsulate Transistors

C1815

FEATURES

Power dissipation

℃ unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Base Voltage

60

V

Collector-Emitter Voltage

50

V

Emitter-Base Voltage

5

V

Collector Current -Continuous

150

mA

Total Device Dissipation

400

mW

Junction and Storage Temperature

-55-150

℃

*These ratings are limiting values above which the serviceability

of any semiconductor device may be impaired.

ELECTRICAL

CHARACTERISTICS（Tamb=25℃

unless

otherwise

specified）

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

60

V

Collector-emitter breakdown voltage

50

V

Emitter-base breakdown voltage

5

V

Collector cut-off current

V ,

0.1

uA

Collector cut-off current

V ,

0.1

uA

Emitter cut-off current

0.1

uA

DC current gain

70

700

Collector-emitter saturation voltage

0.25

V

Base-emitter saturation voltage

1

V

Transition frequency

f=30MHz

80

MHz

Collector Output Capacitance

Cob

VCB=10V,IE=0

f=1MHZ

3.5

pF

Noise Figure

NF

f =1KHz,RG=10K

10

dB

CLASSIFICATION OF

Rank

O

Y

GR

BL

Range

70-140

120-240

200-400

350-700

1 2 3

TO—92

1.EMITTER

2.COLLECTOR

3.BASE