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2SC4881 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC4881 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 4 page  2SC4881 2004-07-26 1 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4881 High-Current Switching Applications • Low saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 0.8 µs (typ.) Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V DC IC 5 Collector current Pulse ICP 8 A Base current IB 1 A Ta = 25°C 2.0 Collector power dissipation Tc = 25°C PC 20 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 ― ― 1 µA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ― ― 1 µA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 ― ― V hFE (1) VCE = 1 V, IC = 1 A 100 ― 320 DC current gain hFE (2) VCE = 1 V, IC = 2.5 A 60 ― ― Collector-emitter saturation voltage VCE (sat) IC = 2.5 A, IB = 125 mA ― 0.25 0.4 V Base-emitter saturation voltage VBE (sat) IC = 2.5 A, IB = 125 mA ― 1.0 1.3 V Transition frequency fT VCB = 4 V, IC = 1 A ― 100 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 45 ― pF Turn-on time ton ― 0.1 ― Storage time tstg ― 0.8 ― Switching time Fall time tf IB1 = −IB2 = 125 mA, duty cycle ≤ 1% ― 0.1 ― µs Unit: mm JEDEC ― JEITA ― TOSHIBA 2-10R1A Weight: 1.7 g (typ.) 20 µs VCC = 30 V Output IB2 IB1 Input |
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