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2SC5028 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC5028 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 5 page  2SC5028 2004-07-26 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC5028 Power Amplifier Applications Power Switching Applications • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1.3 W • High-speed switching: tstg = 500 ns (typ.) • Complementary to 2SA1891 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 2 A Base current IB 0.2 A Collector power dissipation PC 1.3 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 80 V, IE = 0 ― ― 1.0 µA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ― ― 1.0 µA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 ― ― V hFE (1) VCE = 2 V, IC = 100 mA 120 ― 400 DC current gain hFE (2) VCE = 2 V, IC = 1.5 A 40 ― ― Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 0.05 A ― ― 0.5 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 0.05 A ― ― 1.2 V Transition frequency fT VCE = 2 V, IC = 100 mA ― 100 ― MHz Collector output capacitance Cob VCB = 10 V, IC = 0, f = 1 MHz ― 14 ― pF Turn-on time ton ― 0.1 ― Storage time tstg ― 0.5 ― Switching time Fall time tf IB1 = −IB2 = 0.05 A, duty cycle ≤ 1% ― 0.1 ― µs Unit: mm JEDEC ― JEITA ― TOSHIBA 2-8M1A Weight: 0.55 g (typ.) 20 µs 30 V Ootput IB2 IB1 Input |
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