2SC5076 datasheet(1/5 Pages) TOSHIBA

Part #	2SC5076

Description	High-Current Switching Applications.

PDF	5 Pages

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2SC5076

2004-07-07

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC5076

High-Current Switching Applications.

• Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A)

• High-speed switching: tstg = 1.0 µs (typ.)

• Complementary to 2SA1905

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

60

V

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

VEBO

5

V

Collector current

IC

5

A

Base current

IB

1

A

Collector power dissipation

PC

1.3

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 50 V, IE = 0

―

1

µA

Emitter cut-off current

IEBO

VEB = 5 V, IC = 0

―

1

µA

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

50

―

V

hFE (1)

(Note)

VCE = 1 V, IC = 1 A

70

―

240

DC current gain

hFE (2)

VCE = 1 V, IC = 3 A

30

―

Collector-emitter saturation voltage

VCE (sat)

IC = 3 A, IB = 0.15 A

―

0.2

0.4

V

Base-emitter saturation voltage

VBE (sat)

IC = 3 A, IB = 0.15 A

―

0.9

1.2

V

Transition frequency

fT

VCE = 4 V, IC = 1 A

―

120

―

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

―

80

―

pF

Turn-on time

ton

―

0.1

―

Storage time

tstg

―

1.0

―

Switching time

Fall time

tf

IB1 = −IB2 = 0.15 A, duty cycle ≤ 1%

―

0.1

―

µs

Note: hFE (1) classification O: 70 to 140, Y: 120 to 240

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-8M1A

Weight: 0.55 g (typ.)

20 µs

VCC = 30 V

Output

IB2

IB1

Input

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