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2SC5154 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC5154 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 4 page  2SC5154 2004-07-07 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5154 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 5 V DC IC 1.5 Collector current Pulse ICP 3.0 A Base current IB 0.15 A Collector power dissipation PC 1.3 W Junction temperature Tj 150 °C Storage temperature range Tstg −50 to 150 °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 160 V, IE = 0 ― ― 1.0 µA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 1.0 µA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 160 ― ― V DC current gain hFE (Note) VCE = 5 V, IC = 100 mA 70 ― 240 Collector-emitter saturation voltage VCE (sat) IC = 500 mA, IB = 50 mA ― ― 1.0 V Base-emitter voltage VBE VCE = 5 V, IC = 500 mA ― 0.75 0.95 V Transition frequency fT VCE = 10 V, IC = 100 mA ― 100 ― MHz Collector output capacitance Cob VCB = 10 V, IC = 0, f = 1 MHz ― 25 ― pF Note: hFE classification O: 70 to 140, Y: 120 to 240 Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 2-8M1A Weight: 0.55 g (typ.) C5154 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator Part No. (or abbreviation code) |
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