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2SC5173 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC5173 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 4 page  2SC5173 2004-07-26 1 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5173 High-Voltage Switching and Amplifier Applications Color TV Horizontal Driver Applications Color TV Chroma Output Applications • High breakdown voltage: VCEO = 300 V • Small collector output capacitance: Cob = 3.0 pF (typ.) • Collector metal (fin) is fully covered with mold resin. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 300 V Emitter-base voltage VEBO 7 V Collector current IC 100 mA Base current IB 50 mA Collector power dissipation PC 1.8 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Electrical Characteristics (Ta = 25°C unless otherwise noted.) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 240 V, IE = 0 ― ― 1.0 µA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 1.0 µA hFE (1) VCE = 10 V, IC = 4 mA 20 ― ― DC current gain hFE (2) VCE = 10 V, IC = 20 mA 30 ― 200 Collector-emitter saturation voltage VCE (sat) IC = 10 mA, IB = 1 mA ― ― 1.0 V Base-emitter saturation voltage VBE (sat) IC = 10 mA, IB = 1 mA ― ― 1.0 V Transition frequency fT VCE = 10 V, IC = 20 mA 50 70 ― MHz Collector output capacitance Cob VCB = 20 V, IE = 0, f = 1 MHz ― 3.0 ― pF Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 2-10T1A Weight: 1.5 g (typ.) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. C5173 Part No. (or abbreviation code) |
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