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2SC5176 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC5176 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 5 page  2SC5176 2004-07-26 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5176 High-Current Switching Applications DC-DC Converter Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 µs (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 7 V DC IC 5 Collector current Pulse ICP 8 A Base current IB 1 A Collector power dissipation PC 1.8 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 ― ― 1 µA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 1 µA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 80 ― ― V hFE (1) VCE = 1 V, IC = 1 A 70 ― 240 DC current gain hFE (2) VCE = 1 V, IC = 3 A 40 ― ― Collector-emitter saturation voltage VCE (sat) IC = 3 A, IB = 0.15 A ― 0.2 0.4 V Base-emitter saturation voltage VBE (sat) IC = 3 A, IB = 0.15 A ― 0.9 1.2 V Transition frequency fT VCE = 4 V, IC = 1 A ― 120 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 80 ― pF Turn-on time ton ― 0.2 ― Storage time tstg ― 1.0 ― Switching time Fall time tf IB1 = −IB2 = 0.15 A, duty cycle ≤ 1% ― 0.1 ― µs Unit: mm JEDEC ― JEITA ― TOSHIBA 2-10T1A Weight: 1.5 g (typ.) 20 µs VCC ≈ 30 V Output IB2 IB1 Input |
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