2SC5466 datasheet(1/4 Pages) TOSHIBA

Part #	2SC5466

Description	Dynamic Focus Applications

PDF	4 Pages

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2SC5466

2004-07-26

1

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC5466

Dynamic Focus Applications

High Voltage Switching Applications

High Voltage Amplifier Applications

• High voltage: VCEO = 800 V

Maximum Ratings (Tc = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

800

V

Collector-emitter voltage

VCEO

800

V

Emitter-base voltage

VEBO

5

V

Collector current

IC

50

mA

Base current

IB

25

mA

Ta = 25°C

2.0

Collector power

dissipation

Tc = 25°C

PC

10

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Electrical Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 640 V, IE = 0

―

1.0

µA

Emitter cut-off current

IEBO

VEB = 5 V, IC = 0

―

10

µA

DC current gain

hFE

VCE = 5 V, IC = 7 mA

15

―

Collector-emitter saturation voltage

VCE (sat)

IC = 20 mA, IB = 4 mA

―

1.0

V

Base-emitter saturation voltage

VBE (sat)

IC = 20 mA, IB = 4 mA

―

1.5

V

Transition frequency

fT

VCE = 10 V, IC = 3 mA

―

5.5

―

MHz

Collector output capacitance

Cob

VCB = 100 V, f = 1 MHz

―

2.2

―

pF

Marking

Unit: mm

JEDEC

―

JEITA

SC-67

TOSHIBA

2-10R1A

Weight: 1.7 g (typ.)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

C5466

Part No. (or abbreviation code)

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