CBAS17

SURFACE MOUNT

LOW VOLTAGE

SILICON STABISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CBAS17 type is

a planar epitaxial silicon switching diode, designed for

low voltage stabilizing applications.

MARKING CODE: A91

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Peak Repetitive Forward Current

IFRM

250

mA

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IR

VR=4.0V

5.0

µA

VF

IF=0.1mA

580

665

680

mV

VF

IF=1.0mA

665

745

760

mV

VF

IF=5.0mA

725

805

820

mV

VF

IF=10mA

750

825

840

mV

VF

IF=100mA

870

920

960

mV

CT

VR=0, f=1.0MHz

140

pF

SOT-23 CASE

R6 (20-November 2009)

www.centra lsemi.com