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2N3507AL Datasheet(PDF) 1 Page - Microsemi Corporation |
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2N3507AL Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 2 page  TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 T4-LDS-0016 Rev. 1 (072040) Page 1 of 2 DEVICES LEVELS 2N3506 2N3507 JAN 2N3506A 2N3507A JANTX 2N3506L 2N3507L JANTXV 2N3506AL 2N3507AL ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N3506 2N3507 Unit Collector-Emitter Voltage VCEO 40 50 Vdc Collector-Base Voltage VCBO 60 80 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 3.0 Adc Total Power Dissipation @ TA = 25°C (1) @ TC = 25°C (2) PT 1.0 5.0 W Operating & Storage Temperature Range Top, Tstg -65 to +200 °C Note: 1) Derate linearly 5.71 mW/°C for TA > +25°C 2) Derate linearly 55.5 mW/°C for TC > +25°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10mAdc 2N3506 2N3507 V(BR)CEO 40 50 Vdc Collector-Emitter Cutoff Current VCE = 40Vdc VCE = 60Vdc 2N3506 2N3507 ICEX 1.0 1.0 µAdc Collector-Base Breakdown Voltage IC = 100µAdc V(BR)CBO 60 80 Vdc Emitter-Base Breakdown Voltage IE = 10µAdc V(BR)EBO 5 Vdc ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 500mAdc, VCE = 1Vdc 2N3506 2N3507 hFE 50 35 250 175 Forward-Current Transfer Ratio IC = 1.5Adc, VCE = 2Vdc 2N3506 2N3507 hFE 40 30 200 150 Forward-Current Transfer Ratio IC = 2.5Adc, VCE = 3Vdc 2N3506 2N3507 hFE 30 25 TO-5 (L-Versions) TO-39 (TO-205-AD) |
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