2N5002 datasheet(1/2 Pages) MICROSEMI

Part #	2N5002

Description	NPN POWER SILICON TRANSISTOR

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/534

T4-LDS-0038 Rev. 2 (081508)

Page 1 of 2

DEVICES

LEVELS

2N5002

2N5004

JAN

JANTX

JANTXV

JANS

ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

80

V

Collector-Base Voltage

VCBO

100

V

Emitter-Base Voltage

VEBO

5.5

V

Collector Current

IC

(3)

5.0

10

A

Total Power Dissipation

@ TA = +25°C

(1)

@ TC = +25°C

(2)

PT

2.0

58

W

Operating & Storage Junction Temperature Range

TJ, Tstg

-65 to +200

°C

Thermal Resistance, Junction-to Case

RθJC

3.0

°C/W

Thermal Resistance, Junction-to Ambient

RθJA

88

°C/W

Note:

1) Derate linearly 11.4 mW/°C for TA > +25°C

2) Derate linearly 331 mW/°C for TC > +25°C

3) This value applies for PW ≤ 8.3 ms, duty cycle ≤ 1%

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

IC = 100mAdc

V(BR)CEO

80

Vdc

Collector-Emitter Cutoff Current

VCE = 40Vdc, IB = 0

ICEO

50

µAdc

Collector-Emitter Cutoff Current

VCE = 60Vdc, VBE = 0Vdc

VCE = 100Vdc, VBE = 0Vdc

ICES

1.0

µAdc

mAdc

Emitter-Base Cutoff Current

VBE = 4.0Vdc, IC = 0

VBE = 5.5Vdc, IC = 0

IEBO

1.0

mAdc

TO-59

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