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2N5152 Datasheet(PDF) 1 Page - Microsemi Corporation |
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2N5152 Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 2 page  TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 T4-LDS-0039 Rev. 1 (080797) Page 1 of 2 DEVICES LEVELS 2N5152 2N5154 JAN 2N5152L 2N5154L JANTX 2N5152U3 2N5154U3 JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage VEBO 5.5 Vdc Collector Current IC 2.0 Adc Total Power Dissipation (1) @ TA = +25°C @ TC = +25°C PT 1.0 10 W Operating & Storage Junction Temperature Range TJ , Tstg -65 to +200 °C Thermal Resistance, Junction-to Case (1) RθJC 10 1.7 (U3) °C/W Note: 1) See 19500/544 for thermal derating curves. 2) This value applies for PW ≤ 8.3ms, duty cycle ≤ 1%. ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 100mAdc, IB = 0 V(BR)CEO 80 Vdc Emitter-Base Cutoff Current VEB = 4.0Vdc, IC = 0 VEB = 5.5Vdc, IC = 0 IEBO 1.0 1.0 µAdc mAdc Collector-Emitter Cutoff Current VCE = 60Vdc, VBE = 0 VCE = 100Vdc, VBE = 0 ICES 1.0 1.0 µAdc mAdc Collector-Emitter Cutoff Current VCE = 40Vdc, IB = 0 ICEO 50 µAdc ON CHARACTERTICS Forward-Current Transfer Ratio IC = 50mAdc, VCE = 5Vdc IC = 2.5Adc, VCE = 5Vdc 2N5152 2N5154 2N5152 2N5154 hFE 20 50 30 70 --- --- 90 200 TO-5 2N5152L, 2N5154L TO-39 (TO-205AD) 2N5152, 2N5154 U-3 2N5152U3, 2N5154U3 |
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