2N3501 datasheet(2/3 Pages) MICROSEMI

2 / 3 page

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

RADIATION HARDENED

NPN SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/366

T4-LDS-0056 Rev. 1 (080812)

Page 2 of 3

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Emitter-Base Cutoff Current

VEB = 4.0Vdc

VEB = 6.0Vdc

IEBO

ηAdc

μAdc

ON CHARACTERISTICS

(3)

Forward-Current Transfer Ratio

IC = 0.1mAdc, VCE = 10Vdc

2N3498, 2N3500

2N3499, 2N3501

IC = 1.0mAdc, VCE = 10Vdc

2N3498, 2N3500

2N3499, 2N3501

IC = 10mAdc, VCE = 10Vdc

2N3498, 2N3500

2N3499, 2N3501

IC = 150mAdc, VCE = 10Vdc

2N3498, 2N3500

2N3499, 2N3501

100

120

300

IC = 300mAdc, VCE = 10Vdc

2N3500

2N3501

IC = 500mAdc, VCE = 10Vdc

2N3498

2N3499

hFE

Collector-Emitter Saturation Voltage

IC = 10mAdc, IB = 1.0mAdc

IC = 300mAdc, IB = 30mAdc

IC = 150mAdc, IB = 15mAdc

All Types

2N3498, 3N3499

2N3500, 2N3501

VCE(sat)

0.2

0.6

0.4

Vdc

Base-Emitter Saturation Voltage

IC = 10mAdc, IB = 1.0mAdc

IC = 300mAdc, IB = 30mAdc

IC = 150mAdc, IB = 15mAdc

All Types

2N3498, 3N3499

2N3500, 2N3501

VBE(sat)

0.8

1.4

1.2

Vdc

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Magnitude, Forward Current Transfer Ratio

IC = 20mAdc, VCE = 20Vdc, f = 100MHz

|hfe|

1.5

8.0

Output Capacitance

VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz

2N3498, 2N3499

2N3500, 2N3501

Cobo

8.0

Input Capacitance

VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz

Cibo

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