2N3250A datasheet(1/4 Pages) MICROSEMI

Part #	2N3250A

Description	PNP SILICON LOW POWER TRANSISTOR

PDF	4 Pages

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

Gort Road Business Park, Ennis, Co. Clare, Ireland.

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

PNP SILICON

LOW POWER TRANSISTOR

Qualified per MIL-PRF-19500/323

T4-LDS-0093 Rev. 2 (101243)

Page 1 of 4

DEVICES

LEVELS

2N3250A

2N3251A

JAN

2N3250AUB

2N3251AUB

JANTX

JANTXV

ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

60

Vdc

Collector-Base Voltage

VCBO

60

Vdc

Emitter-Base Voltage

VEBO

5.0

Vdc

Collector Current

IC

200

mAdc

Total Power Dissipation

@ TA = +25°C

(1)

@ TC = +25°C

(1)

PT

0.36

1.2

W

Operating & Storage Junction Temperature Range

TJ, Tstg

-65 to +200

°C

THERMAL CHARACTERISTICS

Parameters / Test Conditions

Symbol

Max.

Unit

Thermal Resistance, Junction-to-Case

RθJC

(1)

150

°C/W

Note:

1/ Consult 19500/323 for thermal curves

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

OFF CHARACTERTICS

Collector-Emitter Breakdown Voltage

IC = 10mAdc

V(BR)CEO

60

Vdc

Collector-Emitter Cutoff Voltage

VBE = 3.0Vdc, VCE = 40Vdc

TA = 150°C

ICEX

20

ηAdc

μAdc

Collector-Base Cutoff Current

VCB = 60Vdc

VCB = 40Vdc

ICBO

10

20

μAdc

ηAdc

Emitter-Base Cutoff Current

VEB = 5.0Vdc

IEBO

10

μAdc

Collector-Emitter Cutoff Voltage

VBE = 3.0Vdc, VCE = 40Vdc

IBEX

50

ηAdc

TO-39 (TO-205AD)

UB Package

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