2N5151 datasheet(2/4 Pages) MICROSEMI

2 / 4 page

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

PNP POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/545

T4-LDS-0132 Rev. 1 (091476)

Page 2 of 4

ELECTRICAL CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

ON CHARACTERTICS

Forward-Current Transfer Ratio

IC = 50mAdc, VCE = 5Vdc

IC = 2.5Adc, VCE = 5Vdc

IC = 5Adc, VCE = 5Vdc

2N5151

2N5153

2N5151

2N5153

2N5151

2N5153

hFE

200

Collector-Emitter Saturation Voltage

IC = 2.5Adc, IB = 250mAdc

IC = 5.0Adc, IB = 500mAdc

VCE(sat)

0.75

1.5

Vdc

Base-Emitter Voltage Non-Saturation

IC = 2.5Adc, VCE = 5Vdc

VBE

1.45

Vdc

Base-Emitter Saturation Voltage

IC = 2.5Adc, IB = 250mAdc

IC = 5.0Adc, IB = 500mAdc

VBE(sat)

1.45

2.2

Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

IC = 500mAdc, VCE = 5Vdc, f = 10MHz

2N5151

2N5153

|hfe|

Common-Emitter Small-Signal Short-Circuit. Forward-Current Transfer Ratio

IC = 100mAdc, VCE = 5Vdc, f = 1kHz

2N5151

2N5153

hfe

Output Capacitance

VCB = 10Vdc, IE = 0, f = 1.0MHz

Cobo

250

SWITCHING CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Turn-On Time

IC = 5Adc, IB1 = 500mAdc

IB2 = -500mAdc

RL = 6Ω

VBE(OFF) = 3.7Vdc

ton

0.5

μs

Turn-Off Time

IC = 5Adc, IB1 = 500mAdc

IB2 = -500mAdc

RL = 6Ω

VBE(OFF) = 3.7Vdc

toff

1.5

μs

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