2N4261 datasheet(1/5 Pages) MICROSEMI

Part #	2N4261

Description	PNP SMALL SIGNAL SILICON TRANSISTOR

PDF	5 Pages

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http: //www.microsemi.com

PNP SMALL SIGNAL SILICON TRANSISTOR

Qualified per MIL-PRF-19500/511

T4-LDS-0150 Rev. 2 (101161)

Page 1 of 5

DEVICES

LEVELS

2N4261

2N4261UB

JAN

2N4261UBC *

JANTX

JANTXV

* Available for JANS only

JANS

ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

15

Vdc

Collector-Base Voltage

VCBO

15

Vdc

Emitter-Base Voltage

VEBO

4.5

Vdc

Collector Current

IC

30

mAdc

Total Power Dissipation @ T

A = +25°C

PT

0.2

W

Operating & Storage Junction Temperature Range

Top, Tstg

-65 to +200

°C

Note: Consult 19500/511 for Thermal Performance Curves.

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

OFF CHARACTERTICS

Collector-Emitter Breakdown Voltage

IC = 10mAdc

V(BR)CEO

15

Vdc

Collector-Base Cutoff Current

VCB = 15Vdc

ICBO

10

μAdc

Emitter-Base Cutoff Current

VEB = 4.5Vdc

IEBO

10

μAdc

Collector-Emitter Cutoff Current

VCE = 10Vdc, VBE = 0.4Vdc

ICEX1

50

ηAdc

Collector-Emitter Cutoff Current

VCE = 10Vdc, VBE = 2.0Vdc

ICEX2

5

ηAdc

TO-72

2N4261

3 PIN

2N4261UB

2N4261UBC

(UBC = Ceramic Lid Version)

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