2N3868 datasheet(1/4 Pages) MICROSEMI

Part #	2N3868

Description	PNP SILICON LOW POWER TRANSISTOR

PDF	4 Pages

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http: //www.microsemi.com

PNP SILICON LOW POWER TRANSISTOR

Qualified per MIL-PRF-19500/350

T4-LDS-0170 Rev. 1 (101121)

Page 1 of 4

DEVICES

LEVELS

2N3867

2N3867S

JAN

2N3868

2N3868S

JANTX

JANTXV

JANS

ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol 2N3867

2N3868

Unit

Collector-Base Voltage

VCBO

40

60

Vdc

Collector-Emitter Voltage

VCEO

40

60

Vdc

Emitter-Base Voltage

VEBO

4.0

Vdc

Collector Current

IC

3.0

mAdc

Total Power Dissipation

@ TA = +25°C

(1)

PT

1.0

W/°C

Operating & Storage Junction Temperature Range

TJ, Tstg

-65 to +200

°C

THERMAL CHARACTERISTICS

Parameters / Test Conditions

Symbol

Max.

Unit

Thermal Resistance, Junction-to-Ambient

RθJA

175

°C/mW

Note: * Electrical characteristics for “S” suffix devices are identical to the “non S”

corresponding devices.

1/ Derate linearly 5.71mW/°C for TA > +25°C

2/ Derate linearly 57.1mW/°C for TC > +25°C

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

OFF CHARACTERTICS

Collector-Emitter Breakdown Current

V(BR)CEO

Vdc

IC = 10μAdc

2N3867, S

2N3868, S

40

60

Collector-Base Cutoff Current

VCB = 40Vdc

VCB = 60Vdc

2N3867, S

2N3868, S

ICBO

100

µAdc

Emitter-Base Cutoff Current

VEB = 4.0Vdc

IEBO

100

µAdc

Collector-Emitter Cutoff Current

VCE = 40Vdc

VCE = 60Vdc

VCE = 40Vdc, TA = +150°C

VCE = 60Vdc, TA = +150°C

2N3867, S

2N3868, S

2N3867, S

2N3868, S

ICEX

1.0

50

µAdc

TO-5 *

2N3867, 2N3868

TO-39 * (TP-205AD)

2N3867S, 2N3868S

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