CMLT4413

SURFACE MOUNT

COMPLEMENTARY NPN/PNP

SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLT4413

consists of one isolated 2N4401 NPN silicon transistor

and one complementary isolated 2N4403 PNP silicon

transistor, manufactured by the epitaxial planar process

and epoxy molded in an SOT-563 surface mount

package. This PICOmini™ device is designed for

small signal general purpose amplifier and switching

applications.

MARKING CODE: PC3

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

NPN (Q1)

PNP (Q2)

UNITS

Collector-Base Voltage

VCBO

60

40

V

Collector-Emitter Voltage

VCEO

40

40

V

Emitter-Base Voltage

VEBO

6.0

5.0

V

Continuous Collector Current

IC

600

mA

Power Dissipation (Note 1)

PD

350

mW

Power Dissipation (Note 2)

PD

300

mW

Power Dissipation (Note 3)

PD

150

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)

NPN (Q1)

PNP (Q2)

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

ICEV

VCE=35V, VEB=0.4V

-

0.1

-

0.1

μA

IBEV

VCE=35V, VEB=0.4V

-

0.1

-

0.1

μA

BVCBO

IC=100μA

60

-

40

-

V

BVCEO

IC=1.0mA

40

-

40

-

V

BVEBO

IE=100μA

6.0

-

5.0

-

V

VCE(SAT)

IC=150mA, IB=15mA

-

0.40

-

0.40

V

VCE(SAT)

IC=500mA, IB=50mA

-

0.75

-

0.75

V

VBE(SAT)

IC=150mA, IB=15mA

0.75

0.95

0.75

0.95

V

VBE(SAT)

IC=500mA, IB=50mA

-

1.2

-

1.3

V

hFE

VCE=1.0V, IC=0.1mA

20

-

30

-

hFE

VCE=1.0V, IC=1.0mA

40

-

60

-

hFE

VCE=1.0V, IC=10mA

80

-

100

-

hFE

VCE=1.0V, IC=150mA

100

300

-

-

hFE

VCE=2.0V, IC=150mA

-

-

100

300

hFE

VCE=2.0V, IC=500mA

40

-

20

-

fT

VCE=10V, IC=20mA, f=100MHz

250

-

200

-

MHz

Cob

VCB=5.0V, IE=0, f=1.0MHz

-

6.5

-

8.5

pF

Cib

VBE=0.5V, IC=0, f=1.0MHz

-

30

-

30

pF

• Device is Halogen Free by design

SOT-563 CASE

R1 (20-January 2010)

www.centr a lsemi.com