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CMPDM7003 Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CMPDM7003 Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page  CMPDM7003 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7003 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and ESD protection up to 2kV. MARKING CODE: C7003 MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Drain-Source Voltage VDS 50 V Drain-Gate Voltage VDG 50 V Gate-Source Voltage VGS 12 V Continuous Drain Current ID 280 mA Maximum Pulsed Drain Current IDM 1.5 A Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSSF, IGSSR VGS=5.0V 100 nA IGSSF, IGSSR VGS=10V 2.0 μA IGSSF, IGSSR VGS=12V 2.0 μA IDSS VDS=50V, VGS=0 50 nA BVDSS VGS=0, ID=10μA 50 V VGS(th) VDS=VGS, ID=250μA 0.49 1.0 V VSD VGS=0, IS=115mA 1.4 V rDS(ON) VGS=1.8V, ID=50mA 1.6 3.0 Ω rDS(ON) VGS=2.5V, ID=50mA 1.3 2.5 Ω rDS(ON) VGS=5.0V, ID=50mA 1.1 2.0 Ω gFS VDS=10V, ID=200mA 200 mS Crss VDS=25V, VGS=0, f=1.0MHz 5.0 pF Ciss VDS=25V, VGS=0, f=1.0MHz 50 pF Coss VDS=25V, VGS=0, f=1.0MHz 25 pF FEATURES: • ESD protection up to 2kV • Low rDS(ON) • Low VDS(ON) • Low threshold voltage • Fast switching • Logic level compatibility APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment SOT-23 CASE R1 (27-January 2010) www.centra lsemi.com |
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