CMPDM8002A

SURFACE MOUNT

P-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFET

ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

gFS

VDS =10V, ID=200mA

200

mS

Crss

VDS=25V, VGS=0, f=1.0MHz

7.0

pF

Ciss

VDS=25V, VGS=0, f=1.0MHz

70

pF

Coss

VDS=25V, VGS=0, f=1.0MHz

15

pF

ton, toff

VDD=30V, VGS=10V, ID=200mA,

RG=25Ω, RL=150Ω

20

ns

LEAD CODE:

1) Gate

2) Source

3) Drain

MARKING CODE: C802A

SOT-23 CASE - MECHANICAL OUTLINE

www.centralsemi.com

R1 (27-January 2010)