CMSD2836

CMSD2838

SURFACE MOUNT

DUAL SILICON

SWITCHING DIODES

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMSD2836 and

CMSD2838 are ultra-high speed silicon switching

diodes manufactured by the epitaxial planar

process, in an epoxy molded SUPERmini™ surface

mount package, designed for high speed switching

applications.

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

VRRM

75

V

Average Forward Current

IO

200

mA

Peak Forward Current, tp=1.0s

IFM

300

mA

Power Dissipation

PD

275

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

455

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IR

VR=50V

100

nA

BVR

IR=100μA

75

V

VF

IF=10mA

1.0

V

VF

IF=50mA

1.0

V

VF

IF=100mA

1.2

V

CT

VR=0, f=1.0MHz

1.5

4.0

pF

trr

IR=IF=10mA, Irr=1.0mA, RL=100Ω

4.0

ns

The following configurations are available:

CMSD2836 DUAL, COMMOM ANODE

MARKING CODE: A2C

CMSD2838 DUAL, COMMON CATHODE

MARKING CODE: A6C

SOT-323 CASE

R4 (8-February 2010)

www.centra lsemi.com