SIZE

CODE IDENT NO.

UNSPECIFIED TOLERANCES

DWG NO.

REV.

SHEET

A

00136

N/A

DOC200103

C

4

in accordance with MIL-PRF-38534, as a minimum. Tabulated records are provided as a part

of the deliverable data package. Devices are handled in accordance with MIL-STD-1686 for

Class 1 devices.

3.4.4

Inspection. The inspection requirements of MIL-PRF-55310 apply to all devices delivered to

this document. Inspection conditions and standards are documented in accordance with the

Quality Assurance, ISO-9001 derived, System of QSP-90100.

3.4.5

Test. The Screening test matrix of Table 4 is tailored for selectable-combination testing to

eliminate costs associated with the development/maintenance of device-specific documentation

packages while maintaining performance integrity.

3.4.6

Marking. Device marking shall be in accordance with the requirements of MIL-PRF-55310.

3.4.7

Ruggedized COTS Design Implementation. Design Pedigree “D” devices (see ¶ 5.2) use the

same robust designs found in the other device pedigrees. They do not include the provisions of

traceability or the Class-qualified componentry noted in paragraphs 3.4.3 and 4.1.

4.

DETAIL REQUIREMENTS

4.1

Components

4.1.1

Crystals. Cultured quartz crystal resonators are used to provide the selected frequency for the

devices. Premium Q swept quartz is standard for all Class S level products because of its

superior radiation tolerance. For Class B level products, swept quartz is optional, as required

by the customer. In accordance with MIL-PRF-55310, the manufacturer has a documented

crystal element evaluation program.

4.1.2

Passive Components. Where possible, Established Reliability (ER) failure level R and S

passive components are employed. Otherwise, all components comply with the Element

Evaluation requirements of MIL-PRF-55310, Appendix B.

4.1.3

Class S Microcircuits. Microcircuits are procured from wafer lots that have passed MIL-PRF-

55310 Lot Acceptance Tests for Class S devices. The prescribed die carries a Class 2 ESDS

classification in accordance with MIL-PRF-38535. Although radiation testing is not performed

at the oscillator level, Design Pedigree Codes E and R versions of this TCXO are acceptable

for use in environments of up to 100 krads total dose by analysis of the individual components.

Sinewave devices are assembled with all bipolar semiconductors. ACMOS devices are

assembled with all bipolar semiconductors with the exception of the ACMOS chip used to

provide the CMOS output. An ACMOS die from a radiation tested and certified wafer lot will

be provided for all Class S versions of this TCXO. This microcircuit is certified for

100krad(Si) total ionizing dose (TID), RHA level R (2X minimum margin). NSC, as the

54ACT designer, rates the SEU LET at >40 MeV and SEL at >120MeV for the FACT™

family (AN-932). Our wafer testing does not include these parameters and determinations, but