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CP191V Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CP191V Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page ![]() GEOMETRY PROCESS DETAILS PRINCIPAL DEVICE TYPES CMLT2222A CMLT2207 CMLM2205 CMKT2207 GROSS DIE PER 4 INCH WAFER 41,699 PROCESS CP191V Small Signal Transistor NPN - Amp/Switch Transistor Chip Process EPITAXIAL PLANAR Die Size 16.5 x 16.5 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å www.centralsemi.com R1 (22-March 2010) |
Similar Part No. - CP191V |
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Similar Description - CP191V |
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