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CP591X Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CP591X Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page ![]() GEOMETRY PROCESS DETAILS PRINCIPAL DEVICE TYPES 2N2905A 2N2907A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A GROSS DIE PER 5 INCH WAFER 45,900 PROCESS CP591X Small Signal Transistor PNP - Amp/Switch Transistor Chip Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization Al - 13,000Å Back Side Metalization Au - 18,000Å BACKSIDE COLLECTOR R1 www.centralsemi.com R2 (10-February 2011) |
Similar Part No. - CP591X |
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Similar Description - CP591X |
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