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CP764X Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CP764X Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page ![]() GEOMETRY PROCESS DETAILS PRINCIPAL DEVICE TYPES CMLDM8002A CMPDM8002A CTLDM8002A-M621 GROSS DIE PER 6 INCH WAFER 62,600 PROCESS CP764X Small Signal MOSFET Transistor P-Channel Enhancement-Mode Transistor Chip Process EPITAXIAL PLANAR Die Size 21.7 x 17.7 MILS Die Thickness 5.5 MILS Gate Bonding Pad Area 4.7 x 4.7 MILS Source Bonding Pad Area 6.1 x 7.9 MILS Top Side Metalization Al-Si - 35,000Å Back Side Metalization Au - 12,000Å www.centr a lsemi.com R1 (22-March 2010) |
Similar Part No. - CP764X |
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Similar Description - CP764X |
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